semiconductors-Integrated Circuits - ICs - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Product	Vf - Forward Voltage	Vgs - Gate-Source Voltage	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Series	Packaging	Number of Channels	If - Forward Current	Length	Width	Height	Pd - Power Dissipation	Configuration	Ir - Reverse Current	Ifsm - Forward Surge Current	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Channel Mode	Rise Time	Fall Time	Transistor Type	Product Type	Package	Types of	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Product Category	Installation style	Factory packaging quantity	unit weight	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	Widt	range of working temperature	Vrrm - Repeated reverse voltage
	FDS6986S		GET PRICE	PDF RFQ	11,150 In-stock	onsemi	MOSFET 30V Dual SyncFET			16 V, 20 V	SO-8	- 55 C	+ 150 C		Cut Tape	2 Channel		4.9 mm	3.9 mm	1.75 mm	2 W	Dual			Si	N-Channel	30 V	6.5 A	29 mOhms	Enhancement	4.5 ns, 5 ns	2.5 ns, 11 ns	2 N-Channel				20 ns, 25 ns	7 ns, 8 ns
	2SK2842		GET PRICE	PDF RFQ	6,551 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...			30 V	SC-62-3	- 55 C	+ 150 C		Reel	1 Channel		4.6 mm	2.5 mm	1.6 mm	40 W	Single			Si	N-Channel	500 V	12 A	520 mOhms	Enhancement	22 ns	36 ns	1 N-Channel
	2SK2998		GET PRICE	PDF RFQ	8,755 In-stock	Toshiba Semiconductor	MOSFET	MOSFET Small Signal		30 V	TO-92-3	- 55 C	+ 150 C			1 Channel		5.1 mm	4.1 mm	8.2 mm	900 mW	Single			Si	N-Channel	500 V	500 mA	18 Ohms	Enhancement		11 ns
	2SK3131		GET PRICE	PDF RFQ	23,511 In-stock	Toshiba Semiconductor	MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...			30 V	TO-3PL-3	- 55 C	+ 150 C		Reel	1 Channel		20 mm	5 mm	26 mm	250 W	Single			Si	N-Channel	500 V	50 A	110 mOhms	Enhancement	105 ns	65 ns					51 ns	20 ns	MOSFET
	ISL9N310AS3		GET PRICE	PDF RFQ	24,907 In-stock	onsemi	MOSFET N-Ch LL UltraFET PWM Optimized			20 V		- 55 C	+ 175 C	ISL9N310		1 Channel		10.29 mm		7.88 mm		Single			Si	N-Channel				Enhancement	52 ns	36 ns	1 N-Channel		Tube					Through Hole	50	2.387 g	30 V	62 A	15 mOhms	70 W	39 ns	11 ns	4.83 mm
	12CWQ10FNTRPBF		GET PRICE	PDF RFQ	15,600 In-stock	Vishay Semiconductors	Schottky Diodes & Rectifiers 12 Amp 100 Volt Common Cathode	Schottky Rectifiers	0.95 V			- 55 C	+ 150 C				12 A	6.73 mm	6.22 mm	2.39 mm		Dual Common Cathode	1000 uA	330 A	Si									Schottky Diodes & Rectifiers		Schottky Diode			Schottky diodes and rectifiers	SMD/SMT	2000	300 mg								- 55 C to + 150 C	100 V
	TPCS8204		GET PRICE	PDF RFQ	45,000 In-stock	Toshiba Semiconductor	MOSFET			12 V	TSSOP-Advance-8	- 55 C	+ 150 C			2 Channel		3.65 mm	3.5 mm	0.75 mm	1.1 W	Dual			Si	N-Channel	20 V	6 A	17 mOhms	Enhancement	5 ns	10 ns
	FDQ7238S		GET PRICE	PDF RFQ	22,500 In-stock	onsemi	MOSFET N-Channel PowerTrench			16 V		- 55 C	+ 150 C			2 Channel		8.6 mm	3.9 mm	1.45 mm		Dual			Si	N-Channel				Enhancement		13 ns			Reel					SMD/SMT	2500	338 mg	30 V	14 A	7 mOhms	2.4 W	28 ns, 51 ns	11 ns, 14 ns

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