semiconductors-Integrated Circuits - ICs - Kaimeite

Applied Filters :

10 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Product	Vf - Forward Voltage	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	If - Forward Current	Length	Width	Height	Pd - Power Dissipation	Configuration	Ir - Reverse Current	Ifsm - Forward Surge Current	Technology	Transistor Polarity	Collector- Base Voltage VCBO	Emitter- Base Voltage VEBO	Collector-Emitter Saturation Voltage	Gain Bandwidth Product fT	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Channel Mode	DC Collector/Base Gain hfe Min	Continuous Collector Current	Rise Time	Fall Time	Transistor Type	Product Type	Package	Types of	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Product Category	Factory packaging quantity	unit weight	Factory Pack Quantity	RoHS	Id - Continuous Drain Curren	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	range of working temperature	Vrrm - Repeated reverse voltage	DC Current Gain hFE Max
	FDS6986S		GET PRICE	PDF RFQ	11,150 In-stock	onsemi	MOSFET 30V Dual SyncFET			16 V, 20 V	SMD/SMT	SO-8	- 55 C	+ 150 C	Cut Tape	2 Channel		4.9 mm	3.9 mm	1.75 mm	2 W	Dual			Si	N-Channel					30 V	6.5 A	29 mOhms		Enhancement			4.5 ns, 5 ns	2.5 ns, 11 ns	2 N-Channel				20 ns, 25 ns	7 ns, 8 ns				2500
	2SK2842		GET PRICE	PDF RFQ	6,551 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...			30 V	SMD/SMT	SC-62-3	- 55 C	+ 150 C	Reel	1 Channel		4.6 mm	2.5 mm	1.6 mm	40 W	Single			Si	N-Channel					500 V	12 A	520 mOhms		Enhancement			22 ns	36 ns	1 N-Channel									50
	2SK2998		GET PRICE	PDF RFQ	8,755 In-stock	Toshiba Semiconductor	MOSFET	MOSFET Small Signal		30 V	Through Hole	TO-92-3	- 55 C	+ 150 C		1 Channel		5.1 mm	4.1 mm	8.2 mm	900 mW	Single			Si	N-Channel					500 V	500 mA	18 Ohms		Enhancement				11 ns
	2SK3131		GET PRICE	PDF RFQ	23,511 In-stock	Toshiba Semiconductor	MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...			30 V	Through Hole	TO-3PL-3	- 55 C	+ 150 C	Reel	1 Channel		20 mm	5 mm	26 mm	250 W	Single			Si	N-Channel					500 V	50 A	110 mOhms		Enhancement			105 ns	65 ns					51 ns	20 ns	MOSFET
	12CWQ10FNTRPBF		GET PRICE	PDF RFQ	15,600 In-stock	Vishay Semiconductors	Schottky Diodes & Rectifiers 12 Amp 100 Volt Common Cathode	Schottky Rectifiers	0.95 V				- 55 C	+ 150 C			12 A	6.73 mm	6.22 mm	2.39 mm		Dual Common Cathode	1000 uA	330 A	Si																Schottky Diodes & Rectifiers		Schottky Diode			Schottky diodes and rectifiers	2000	300 mg									- 55 C to + 150 C	100 V
	TPCS8204		GET PRICE	PDF RFQ	45,000 In-stock	Toshiba Semiconductor	MOSFET			12 V	SMD/SMT	TSSOP-Advance-8	- 55 C	+ 150 C		2 Channel		3.65 mm	3.5 mm	0.75 mm	1.1 W	Dual			Si	N-Channel					20 V	6 A	17 mOhms		Enhancement			5 ns	10 ns
	FDQ7238S		GET PRICE	PDF RFQ	22,500 In-stock	onsemi	MOSFET N-Channel PowerTrench			16 V			- 55 C	+ 150 C		2 Channel		8.6 mm	3.9 mm	1.45 mm		Dual			Si	N-Channel									Enhancement				13 ns			Reel					2500	338 mg				14 A	7 mOhms	2.4 W	28 ns, 51 ns	11 ns, 14 ns
	HUF76143S3		GET PRICE	PDF RFQ	50,000 In-stock	onsemi	MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch			16 V	Through Hole		- 40 C	+ 150 C	Tube	1 Channel		6.8 mm	2.5 mm	6.3 mm	225 W	Single			Si	N-Channel					30 V		5.5 mOhms		Enhancement			145 ns, 55 ns	18 ns	1 N-Channel				30 ns, 40 ns	22 ns, 14 ns			0.084199 oz	50	N	75 A
	SSM3K35FS(T5L,F,T)		GET PRICE	PDF RFQ	40,000 In-stock	Toshiba Semiconductor	MOSFET			4 V	SMD/SMT			+ 150 C		1 Channel		1.6 mm	0.8 mm	0.7 mm	100 mW	Single			Si	N-Channel					20 V	180 mA	3 Ohms	400 mV	Enhancement					1 N-Channel				300 ns	115 ns
	A1941		GET PRICE	PDF RFQ	8,623 In-stock	Toshiba					Through Hole			+ 150 C							100 W	Single			Si	PNP	- 140 V	- 5 V	2 V	30 MHz						35	10 A				BJTs - Bipolar Transistors						4000												83

Page 1 / 1