- Number of Channels :
- Length :
- Width :
- Height :
- Pd - Power Dissipation :
- Configuration :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Rise Time | Fall Time | Transistor Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
45,000
In-stock
|
Toshiba Semiconductor | MOSFET | 12 V | SMD/SMT | TSSOP-Advance-8 | - 55 C | + 150 C | 2 Channel | 3.65 mm | 3.5 mm | 0.75 mm | 1.1 W | Dual | Si | N-Channel | 20 V | 6 A | 17 mOhms | Enhancement | 5 ns | 10 ns | ||||||
|
|
GET PRICE |
40,000
In-stock
|
Toshiba Semiconductor | MOSFET | 4 V | SMD/SMT | + 150 C | 1 Channel | 1.6 mm | 0.8 mm | 0.7 mm | 100 mW | Single | Si | N-Channel | 20 V | 180 mA | 3 Ohms | 400 mV | Enhancement | 1 N-Channel | 300 ns | 115 ns |
