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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Packaging :
Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Typical Turn-Off Delay Time :
Typical Turn-On Delay Time :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Channel Mode Rise Time Fall Time Transistor Type Typical Turn-Off Delay Time Typical Turn-On Delay Time unit weight Factory Pack Quantity RoHS Id - Continuous Drain Curren
2SK2842
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6,551
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Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... 30 V SMD/SMT SC-62-3 - 55 C + 150 C Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel 500 V 12 A 520 mOhms   Enhancement 22 ns 36 ns 1 N-Channel       50    
HUF76143S3
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50,000
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onsemi MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch 16 V Through Hole   - 40 C + 150 C Tube 1 Channel 6.8 mm 2.5 mm 6.3 mm 225 W Single Si N-Channel 30 V   5.5 mOhms   Enhancement 145 ns, 55 ns 18 ns 1 N-Channel 30 ns, 40 ns 22 ns, 14 ns 0.084199 oz 50 N 75 A
SSM3K35FS(T5L,F,T)
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RFQ
40,000
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Toshiba Semiconductor MOSFET 4 V SMD/SMT     + 150 C   1 Channel 1.6 mm 0.8 mm 0.7 mm 100 mW Single Si N-Channel 20 V 180 mA 3 Ohms 400 mV Enhancement     1 N-Channel 300 ns 115 ns        
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