- Package / Case :
- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Applied Filters :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
162
In-stock
|
Infineon Technologies | IGBT Modules 1200V 400A DUAL HALF BRIDGE | IGBT Silicon Modules | 62 mm | + 125 C | 2000 W | Dual | 1200 V | 2.15 V | 580 A | 400 nA | |||
|
GET PRICE |
230
In-stock
|
Infineon Technologies | 3AUA0000018264 IGBT Modules 1200V 300A DUAL | IS5a ( 62 mm )-7 | + 125 C | 1450 W | Dual | 1200 V | 1.7 V | 300 A | 400 nA |