Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector- Base Voltage VCBO :
Emitter- Base Voltage VEBO :
Collector-Emitter Saturation Voltage :
Maximum DC Collector Current :
Gain Bandwidth Product fT :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Series Configuration Transistor Polarity Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Maximum DC Collector Current Gain Bandwidth Product fT
HN1C01FU-GR,LF
GET PRICE
RFQ
8,725
In-stock
Toshiba Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp SMD/SMT SOT-363-6 + 125 C HN1C01 Dual NPN 50 V, 50 V 60 V, 60 V 5 V, 5 V 100 mV, 100 mV 150 mA, 150 mA 80 MHz, 80 MHz
HN1C01F-GR(TE85L,F
GET PRICE
RFQ
4,782
In-stock
Toshiba Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A SMD/SMT SOT-26-6   HN1C01 Dual NPN 50 V 60 V 5 V 0.1 V 150 mA 80 MHz
HN1C01FE-Y,LF
GET PRICE
RFQ
11,750
In-stock
Toshiba Bipolar Transistors - BJT Transistor for Small Signal Amp     + 150 C HN1C01 Dual NPN 50 V 60 V 5 V 100 mV 150 mA 80 MHz
HN1C01FYTE85LF
GET PRICE
RFQ
8,542
In-stock
Toshiba Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A SMD/SMT SOT-26-6   HN1C01 Dual NPN 50 V 60 V 5 V 0.1 V 150 mA 80 MHz
HN1C01FE-GR,LF
VIEW
RFQ
Toshiba Bipolar Transistors - BJT Transistor for Small Signal Amp       HN1C01                
Page 1 / 1