- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
370
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 150A | IGBT Silicon Modules | Module | + 150 C | Bulk | 790 W | Dual | 1200 V | 1.75 V | 150 A | 100 nA | |||
|
|
GET PRICE |
12,600
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 400A | IGBT Silicon Modules | Module | + 150 C | 2400 W | Single | 1.2 kV | 1.75 V | 400 A | 400 nA |
