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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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14
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 25A | IGBT Silicon Modules | + 150 C | Tray | 175 W | 1200 V | 2.25 V | 39 A | 400 nA | ||||
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570
In-stock
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Infineon Technologies | IGBT Modules IGBT 600V 50A | IGBT Silicon Modules | Module | + 150 C | Tray | 175 W | IGBT-Inverter | 600 V | 1.45 V | 65 A | 400 nA |
