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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage Package RoHS
FF600R12KL4C
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Infineon Technologies IGBT Modules 1200V 600A DUAL     - 40 C + 125 C Box 3.9 W   1200 V 2.1 V 950 A 600 nA 20 V Module 100% Green available
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3
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Infineon Technologies IGBT Modules N-CH 1.7KV 950A IGBT Silicon Modules IHM130   + 125 C     Single Dual Collector Dual Emitter 1700 V   950 A        
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Infineon Technologies IGBT Modules N-CH 1.7KV 950A IGBT Silicon Modules IHM130   + 125 C     Dual Dual Collector Dual Emitter 1700 V   950 A        
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