Build a global manufacturer and supplier trusted trading platform.
Maximum Operating Temperature :
Pd - Power Dissipation :
Configuration :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
FS75R12KT3
GET PRICE
RFQ
10,000
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 105A IGBT Silicon Modules Econo 2 + 125 C   355 W Hex 1200 V 2.15 V 105 A 400 nA
FP75R12KT3
GET PRICE
RFQ
401
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 105A IGBT Silicon Modules Econo 3 + 125 C   355 W Hex 1200 V 2.15 V 105 A 400 nA
BSM75GAL120DN2
GET PRICE
RFQ
3,200
In-stock
Infineon Technologies IGBT Modules 1200V 75A CHOPPER IGBT Silicon Modules Half Bridge GAL 1 + 150 C Tray 625 W Half Bridge 1200 V 2.5 V 105 A 400 nA
FP75R12KE3
GET PRICE
RFQ
190
In-stock
Infineon Technologies IGBT Modules 1200V 75A PIM IGBT Silicon Modules EconoPIM3 + 125 C   350 W Hex 1200 V 2.15 V 105 A 400 nA
FS75R12KE3G
GET PRICE
RFQ
17,000
In-stock
Infineon Technologies IGBT Modules 1200V 75A 3-PHASE IGBT Silicon Modules EconoPACK 3B + 125 C   355 W Hex 1200 V 1.7 V 105 A 400 nA
FS75R12KE3
GET PRICE
RFQ
150
In-stock
Infineon Technologies IGBT Modules 1200V 75A 3-PHASE IGBT Silicon Modules EconoPACK 2 + 125 C   350 W Hex 1200 V 1.7 V 105 A 400 nA
BSM75GB120DN2
GET PRICE
RFQ
13,600
In-stock
Infineon Technologies IGBT Modules 1200V 75A DUAL IGBT Silicon Modules Half Bridge1 + 150 C   625 W Half Bridge 1200 V 2.5 V 105 A 320 nA
Page 1 / 1