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Pd - Power Dissipation :
Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
BSM50GB170DN2
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RFQ
11,200
In-stock
Infineon Technologies IGBT Modules 1700V 50A 500W HALF-BRIDGE IGBT Silicon Modules Half Bridge1 + 150 C 500 W Half Bridge 1700 V 3.4 V 72 A 320 nA
BSM50GD120DN2
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RFQ
168
In-stock
Infineon Technologies IGBT Modules 1200V 50A FL BRIDGE IGBT Silicon Modules EconoPACK 2A + 150 C 350 W Hex 1200 V 2.5 V 72 A 200 nA
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