- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Applied Filters :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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3
In-stock
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Infineon Technologies | IGBT Modules IGBT 1700V 3600A | IGBT Silicon Modules | + 150 C | 21 kW | 1700 V | 2.25 V | 3600 A | 400 nA | ||||||
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36
In-stock
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Infineon Technologies | IGBT Modules 1200V 3600A SINGLE | IHM 190X140-9 | + 125 C | Bulk | 14.8 kW | Triple Common Emitter Common Gate | 1200 V | 1.7 V | 3600 A | 400 nA |