- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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22
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 200A 650V | IGBT Silicon Modules | + 150 C | 600 W | 650 V | 1.95 V | 200 A | 400 nA | |||||
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GET PRICE |
60
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 200A | IGBT Silicon Modules | Econo 3 | + 125 C | 700 W | Hex | 1200 V | 2.15 V | 200 A | 400 nA | |||
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GET PRICE |
6
In-stock
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Infineon Technologies | IGBT Modules 1200V 200A DUAL | IS5a ( 62 mm )-5 | + 125 C | 1.04 kW | Single | 1200 V | 1.7 V | 200 A | 400 nA | ||||
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GET PRICE |
17,000
In-stock
|
Infineon Technologies | IGBT Modules 1200V 200A CHOPPER | IS5a ( 62 mm )-5 | + 125 C | Tray | 1.04 kW | Single | 1200 V | 1.7 V | 200 A | 400 nA | |||
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GET PRICE |
15,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 200A | IGBT Silicon Modules | EconoDUAL-3 | + 125 C | 695 W | Dual | 1200 V | 1.7 V | 200 A | 400 nA | |||
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GET PRICE |
52
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 780 W | Dual | 1200 V | 2.1 V | 200 A | 400 nA | |||
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GET PRICE |
10,000
In-stock
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Infineon Technologies | IGBT Modules 1200V 150A 3-PHASE | IGBT Silicon Modules | EconoPACK+ | + 125 C | 695 W | Hex | 1200 V | 1.7 V | 200 A | 400 nA | |||
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GET PRICE |
26,500
In-stock
|
Infineon Technologies | IGBT Modules 1200V 200A DUAL | IS5a ( 62 mm )-7 | + 125 C | 1.05 kW | Dual | 1200 V | 1.7 V | 200 A | 400 nA |
