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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
F3L75R12W1H3_B27
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2
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Infineon Technologies IGBT Modules IGBT Silicon Modules EasyPack1B + 150 C   275 W 3-Phase 1.2 kV 1.45 V 45 A 100 nA
FS30R06W1E3
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RFQ
6
In-stock
Infineon Technologies IGBT Modules N-CH 600V 45A IGBT Silicon Modules EASY1B + 150 C   150 W Hex 600 V 2 V 45 A 400 nA
BSM25GP120
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RFQ
190
In-stock
Infineon Technologies IGBT Modules 1200V 25A PIM IGBT Silicon Modules EconoPIM2 + 125 C Tray 230 W Array 7 1600 V 2.55 V 45 A 300 nA
BSM35GP120
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RFQ
90
In-stock
Infineon Technologies IGBT Modules 1200V 35A PIM IGBT Silicon Modules EconoPIM2 + 125 C   230 W Hex 1200 V 2.4 V 45 A 300 nA
FS25R12W1T4
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1,430
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 45A IGBT Silicon Modules EASY1B + 150 C     Hex 1200 V   45 A  
BSM35GP120G
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RFQ
13,600
In-stock
Infineon Technologies IGBT Modules 1200V 35A PIM IGBT Silicon Modules EconoPIM3 + 125 C   230 W Hex 1200 V 2.4 V 45 A 300 nA
FZ30R07W1E3_B31A
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Infineon Technologies IGBT Modules EASY IGBT Silicon Modules EasyPack1B + 150 C   150 W Single 650 V 1.8 V 45 A 400 nA
FZ30R07W1E3B31ABOMA1
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RFQ
Infineon Technologies IGBT Modules IGBT Silicon Modules EasyPack1B + 150 C Tray 150 W Single 650 V 1.8 V 45 A 400 nA
F3L30R06W1E3_B11
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RFQ
24
In-stock
Infineon Technologies IGBT Modules IGBT MODULES 600V 30A IGBT Silicon Modules Module + 150 C   150 W 3-Phase 600 V 1.55 V 45 A 400 nA
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