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Maximum Operating Temperature :
Pd - Power Dissipation :
Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
FS50R07W1E3_B11A
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RFQ
90
In-stock
Infineon Technologies IGBT Modules EASY IGBT Silicon Modules EasyPack1B + 150 C   205 W Single 650 V 1.7 V 70 A 400 nA
F4-50R12KS4
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RFQ
12,000
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 70A IGBT Silicon Modules Econo 2 + 125 C   355 W Quad 1200 V 3.75 V 70 A 400 nA
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RFQ
120
In-stock
Infineon Technologies IGBT Modules N-CH 600V 70A IGBT Silicon Modules Econo 2 + 150 C Bulk   Hex 600 V   70 A  
IXGR55N120A3H1
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IXYS IGBT Modules High Frequency Range 40khz C-IGBT w/Diode IGBT Silicon Modules TO-247AD-3 + 150 C Tube   Single 1.2 kV 2.2 V 70 A +/- 100 nA
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RFQ
132
In-stock
Infineon Technologies IGBT Modules 600V 50A PIM IGBT Silicon Modules EconoPIM3 + 125 C   250 W Hex 600 V 2.2 V 70 A 300 nA
FS50R07W1E3B11ABOMA1
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RFQ
Infineon Technologies IGBT Modules IGBT Silicon Modules EasyPack1B + 150 C Tray 205 W Single 650 V 1.7 V 70 A 400 nA
BSM35GD120DLCE3224
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RFQ
46
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 70A IGBT Silicon Modules EconoPACK 2A + 125 C Reel 280 W Hex 1200 V 2.1 V 70 A 400 nA
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RFQ
125
In-stock
Infineon Technologies IGBT Modules 600V 50A PIM IGBT Silicon Modules EconoPIM2 + 125 C   250 W Hex 600 V 2.2 V 70 A 300 nA
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RFQ
95
In-stock
Infineon Technologies IGBT Modules 600V 50A 3-PHASE IGBT Silicon Modules EconoPACK 2A + 125 C   250 W Hex 600 V 2.2 V 70 A 400 nA
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