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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
BSM25GD120DN2E3224
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268
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Infineon Technologies IGBT Modules N-CH 1.2KV 35A IGBT Silicon Modules EconoPACK 2 + 150 C 200 W Hex 1200 V 2.5 V 35 A 180 nA
BSM25GD120DN2
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RFQ
168
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Infineon Technologies IGBT Modules 1200V 25A FL BRIDGE IGBT Silicon Modules EconoPACK 2A + 150 C 200 W Hex 1200 V 2.5 V 35 A 180 nA
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