- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Applied Filters :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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370
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 150A | IGBT Silicon Modules | Module | + 150 C | Bulk | 790 W | Dual | 1200 V | 1.75 V | 150 A | 100 nA | |||
|
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15,000
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 50A | IGBT Silicon Modules | Module | + 150 C | 335 W | IGBT-Inverter | 1200 V | 1.85 V | 83 A | 100 nA | ||||
|
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19,000
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 25A | IGBT Silicon Modules | Module | + 150 C | 160 W | 3-Phase | 1200 V | 1.85 V | 25 A | 100 nA | ||||
|
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4
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 300A 650V | IGBT Silicon Modules | Module | + 150 C | 1100 W | Dual | 650 V | 1.55 V | 390 A | 100 nA | ||||
|
GET PRICE |
11
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 25A 1200V | IGBT Silicon Modules | Module | + 150 C | 160 W | Dual Modules | 1200 V | 1.85 V | 100 nA |