- Pd - Power Dissipation :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
175
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 300A 1700V | IGBT Silicon Modules | 62 mm | + 150 C | 1800 W | Dual | 1700 V | 2.45 V | 440 A | 100 nA | ||
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3
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 200A 1700V | IGBT Silicon Modules | 62 mm | + 150 C | 1250 W | Dual | 1700 V | 2.45 V | 310 A | 100 nA | |||
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GET PRICE |
100
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 150A 1700V | IGBT Silicon Modules | 62 mm | + 150 C | 1100 W | Dual | 1700 V | 2.45 V | 250 A | 100 nA |
