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Package / Case :
Packaging :
Minimum Quantity :
Voltage - Collector Emitter Breakdown (Max) :
Current - Collector (Ic) (Max) :
Gate Charge :
Td (on/off) @ 25°C :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Input Type Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity Power - Max Reverse Recovery Time (trr) IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
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Infineon Technologies IGBT CHIP WAFER Die - Bulk Standard Surface Mount -40°C ~ 175°C (TJ) Active Die 0 580 - - - 1200V 75A 2V @ 15V, 75A - - 480nC 80ns/210ns 600V, 75A, 1.5 Ohm, 15V
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Infineon Technologies IGBT 600V 150A 428W TO247-3 TO-247-3 TrenchStop® Tube Standard Through Hole -40°C ~ 175°C (TJ) Active PG-TO247-3 0 1 428W - Trench Field Stop 600V 150A 2V @ 15V, 75A 225A 4.5mJ 470nC 33ns/330ns 400V, 75A, 5 Ohm, 15V
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Infineon Technologies IC DISCRETE 600V TO247-3 TO-247-3 Automotive, AEC-Q101, TrenchStop™ Tube Standard Through Hole -40°C ~ 175°C (TJ) Active PG-TO247-3 0 1 428W - Trench Field Stop 600V 80A 2V @ 15V, 75A 225A 2mJ (on), 2.5mJ (off) 470nC 33ns/330ns 400V, 75A, 5 Ohm, 15V
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