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Package / Case :
Packaging :
Supplier Device Package :
Minimum Quantity :
Voltage - Collector Emitter Breakdown (Max) :
Current - Collector (Ic) (Max) :
Vce(on) (Max) @ Vge, Ic :
Td (on/off) @ 25°C :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Input Type Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity Power - Max Reverse Recovery Time (trr) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
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Infineon Technologies IGBT CHIP WAFER Die - Bulk Standard Surface Mount -40°C ~ 175°C (TJ) Active Die 0 2290 - - 1200V 15A 2.3V @ 15V, 15A - - 80nC 28ns/122ns 600V, 15A, 10 Ohm, 15V
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400
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Infineon Technologies IGBT 600V 60A 214W TO-247AC TO-247-3 - Tube Standard Through Hole -55°C ~ 175°C (TJ) Active TO-247AD 0 1 214W 176ns 600V 60A 1.9V @ 15V, 24A 72A 915µJ (on), 280µJ (off) 80nC 30ns/75ns 400V, 24A, 10 Ohm, 15V
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RFQ
396
In-stock
Infineon Technologies IGBT 600V 60A 214W TO-247AC TO-247-3 - Tube Standard Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 1 214W 176ns 600V 60A 1.9V @ 15V, 24A 72A 915µJ (on), 280µJ (off) 80nC 30ns/75ns 400V, 24A, 10 Ohm, 15V
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