- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Continuous Collector Current at 25 C :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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35
In-stock
|
Infineon Technologies | IGBT Modules 1.7KV 3.6KA | IHM190 | + 125 C | Single | |||||||||
|
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36
In-stock
|
Infineon Technologies | IGBT Modules 3300V 800A CHOPPER | IGBT Silicon Modules | IHM190 | + 125 C | 9.6 kW | Dual | 3300 V | 3.4 V | 1300 A | 400 nA | |||
|
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30
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.7KV 3.8KA | IGBT Silicon Modules | IHM190 | + 125 C | 19.2 kW | Triple Common Emitter Common Gate | 1700 V | 2.6 V | 3800 A | 400 nA |