- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
11,200
In-stock
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Infineon Technologies | IGBT Modules 1700V 50A 500W HALF-BRIDGE | IGBT Silicon Modules | Half Bridge1 | + 150 C | 500 W | Half Bridge | 1700 V | 3.4 V | 72 A | 320 nA | |||
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GET PRICE |
20,100
In-stock
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Infineon Technologies | IGBT Modules 1200V 50A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | Bulk | 400 W | Half Bridge | 1200 V | 2.5 V | 78 A | 200 nA | ||
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GET PRICE |
13,600
In-stock
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Infineon Technologies | IGBT Modules 1200V 75A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 625 W | Half Bridge | 1200 V | 2.5 V | 105 A | 320 nA | |||
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VIEW | Infineon Technologies | IGBT Modules 1200V 35A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 280 W | Half Bridge | 1200 V | 3.2 V | 50 A | 150 nA | ||||
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GET PRICE |
19,500
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 700 W | Half Bridge | 1200 V | 2.5 V | 145 A | 400 nA |
