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Maximum Operating Temperature :
Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
10 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
BSM200GB60DLC
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RFQ
54,000
In-stock
Infineon Technologies IGBT Modules 600V 200A DUAL IGBT Silicon Modules 34MM + 125 C   445 W Dual 600 V 1.95 V 230 A 400 nA
BSM100GB60DLC
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RFQ
211
In-stock
Infineon Technologies IGBT Modules 600V 100A DUAL IGBT Silicon Modules 34MM + 125 C   445 W Dual 600 V 1.95 V 130 A 400 nA
BSM50GB60DLC
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RFQ
12
In-stock
Infineon Technologies IGBT Modules 600V 50A DUAL IGBT Silicon Modules 34MM + 125 C   280 W Dual 600 V 2.2 V 75 A 400 nA
BSM150GB60DLC
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RFQ
30,000
In-stock
Infineon Technologies IGBT Modules 600V 150A DUAL IGBT Silicon Modules 34MM + 125 C   730 W Dual 600 V 1.95 V 180 A 400 nA
BSM75GB60DLC
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RFQ
16,000
In-stock
Infineon Technologies IGBT Modules 600V 75A DUAL IGBT Silicon Modules 34MM + 125 C   355 W Dual 600 V 2.2 V 100 A 400 nA
BSM75GB170DN2
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RFQ
86
In-stock
Infineon Technologies IGBT Modules N-CH 1.7KV 110A IGBT Silicon Modules 34MM + 150 C     Dual 1700 V   110 A  
BSM100GB120DLCK
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RFQ
15,300
In-stock
Infineon Technologies IGBT Modules 1200V 100A DUAL IGBT Silicon Modules 34MM + 125 C Tray 835 W Dual 1200 V 2.1 V 205 A 400 nA
BSM50GB120DLC
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RFQ
63
In-stock
Infineon Technologies IGBT Modules 1200V 50A DUAL IGBT Silicon Modules 34MM + 125 C   460 W Dual 1200 V 2.4 V 115 A 400 nA
BSM100GAL120DLCK
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RFQ
Infineon Technologies IGBT Modules 1200V 100A CHOPPER IGBT Silicon Modules 34MM + 125 C   830 W Single 1200 V 2.1 V 205 A 400 nA
BSM75GB120DLC
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RFQ
14,500
In-stock
Infineon Technologies IGBT Modules 1200V 75A DUAL IGBT Silicon Modules 34MM + 125 C Tray 690 W Dual 1200 V 2.4 V 170 A 400 nA
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