- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Continuous Collector Current at 25 C :
- Gate-Emitter Leakage Current :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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24
In-stock
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Fairchild Semiconductor | IGBT Modules High Power Module | IGBT Silicon Modules | F2 | + 150 C | Tray | 156 W | Triple | 650 V | 1.55 V | 40 A | 2 uA | ||
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70
In-stock
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Fairchild Semiconductor | IGBT Modules 650V 50A 3L inverter High Power Module | IGBT Silicon Modules | F2 | + 150 C | Tray | 135 W, 174 W | 3-Phase | 650 V, 650 V | 2.13 V, 2.49 V | 30 A, 50 A | 2 uA, 2 uA | ||
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GET PRICE |
152
In-stock
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Fairchild Semiconductor | IGBT Modules High Power Module | IGBT Silicon Modules | F2 | + 150 C | Tray | 98 W, 140 W, 156 W | Triple | 650 V | 1.55 V | 40 A | +/- 2 uA |
