- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
13,500
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.7KV 404A | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Dual | 1700 V | 2.45 V | 404 A | 400 nA | |||
|
|
GET PRICE |
26
In-stock
|
Infineon Technologies | IGBT Modules IGBT Module 450A 650V | IGBT Silicon Modules | + 150 C | 1450 W | Dual | 650 V | 1.95 V | 560 A | 100 nA | ||||
|
|
GET PRICE |
62
In-stock
|
Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | EUPEC | + 125 C | 1450 W | Single | 1200 V | 1.7 V | 480 A | 400 nA | |||
|
|
GET PRICE |
200
In-stock
|
Infineon Technologies | IGBT Modules 1200V 300A 3-PHASE | IGBT Silicon Modules | EconoPACK+ | + 125 C | Tray | 1450 W | Hex | 1200 V | 1.7 V | 500 A | 400 nA | ||
|
|
VIEW | Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Single Dual Emitter | 1200 V | 2.1 V | 370 A | 400 nA | ||||
|
|
|
GET PRICE |
36
In-stock
|
Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Single Dual Emitter | 1200 V | 2.1 V | 370 A | 400 nA |
