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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
FP50R12KT4
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RFQ
15,000
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 50A IGBT Silicon Modules Econo 3 + 150 C Tray 280 W 3-Phase 1200 V 2.25 V 50 A 100 nA
BSM50GB60DLC
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RFQ
12
In-stock
Infineon Technologies IGBT Modules 600V 50A DUAL IGBT Silicon Modules 34MM + 125 C   280 W Dual 600 V 2.2 V 75 A 400 nA
BSM35GD120DN2E3224
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RFQ
179
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 50A IGBT Silicon Modules EconoPACK 2 + 150 C Bulk 280 W Hex 1200 V 2.7 V 50 A 150 nA
FP50R12KT4G
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RFQ
10,000
In-stock
Infineon Technologies IGBT Modules IGBT Module 50A 1200V IGBT Silicon Modules Econo 3 + 150 C   280 W 3-Phase 1200 V 2.25 V 50 A 100 nA
BSM35GD120DLCE3224
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RFQ
46
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 70A IGBT Silicon Modules EconoPACK 2A + 125 C Reel 280 W Hex 1200 V 2.1 V 70 A 400 nA
BSM35GB120DN2
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RFQ
Infineon Technologies IGBT Modules 1200V 35A DUAL IGBT Silicon Modules Half Bridge1 + 150 C   280 W Half Bridge 1200 V 3.2 V 50 A 150 nA
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