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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | Factory Pack Quantity | RoHS | |
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241
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Mitsubishi Electric | IGBT Modules IGBT MODULE NF-SERIES DUAL | Box | 650 W | 1.2 kV | 1.8 V | 100 A | 500 nA | 20 V | Module | 10 | Green available | ||||||
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160
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Infineon Technologies | IGBT Modules 1200V 100A 3-PHASE | IGBT Silicon Modules | EconoPACK 3A | + 125 C | 650 W | Hex | 1200 V | 2.1 V | 160 A | 400 nA |
