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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | Module | + 150 C | 71.5 W | IGBT-Inverter | 600 V | 1.55 V | 25 A | 400 nA | ||
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VIEW | Infineon Technologies | IGBT Modules IGBT 600V 15A | IGBT Silicon Modules | Module | + 150 C | 71.5 W | IGBT-Inverter | 600 V | 1.55 V | 22 A | 400 nA |
