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Package / Case :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
FF200R12KE4
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RFQ
150
In-stock
Infineon Technologies IGBT Modules IGBT-MODULE IGBT Silicon Modules 62 mm + 150 C 1100 W Dual 1200 V 2.05 V 240 A 400 nA
FF300R07ME4_B11
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RFQ
4
In-stock
Infineon Technologies IGBT Modules IGBT Module 300A 650V IGBT Silicon Modules Module + 150 C 1100 W Dual 650 V 1.55 V 390 A 100 nA
FF150R17KE4
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RFQ
100
In-stock
Infineon Technologies IGBT Modules IGBT Module 150A 1700V IGBT Silicon Modules 62 mm + 150 C 1100 W Dual 1700 V 2.45 V 250 A 100 nA
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