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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
109
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 580A | IGBT Silicon Modules | 62 mm | + 150 C | Bulk | 2400 W | Dual | 1200 V | 2.1 V | 580 A | 400 nA | ||
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12,600
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 400A | IGBT Silicon Modules | Module | + 150 C | 2400 W | Single | 1.2 kV | 1.75 V | 400 A | 400 nA | |||
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GET PRICE |
200
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 400A | IGBT Silicon Modules | + 150 C | Tray | 2400 W | 1200 V | 2.05 V | 400 A | 400 nA |
