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Gate-Emitter Leakage Current :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage Package RoHS
BSM100GAL120DN2
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RFQ
230
In-stock
Infineon Technologies IGBT Modules 1200V 100A CHOPPER     + 150 C Box 800 W   1200 V 2.5 V 150 A 400 nA 20 V Module 100% Green available
BSM100GB120DN2
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RFQ
132
In-stock
Infineon Technologies IGBT Modules 1200V 100A DUAL IGBT Silicon Modules Half Bridge2 + 150 C   800 W Half Bridge 1200 V 2.5 V 150 A 200 nA      
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