- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Applied Filters :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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143
In-stock
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Infineon Technologies | IGBT Modules IGBT-Module/ IGBT-inverter | IGBT Silicon Modules | 62 mm | + 125 C | Single Dual Emitter | 1200 V | 510 A | ||||||
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GET PRICE |
80
In-stock
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Infineon Technologies | IGBT Modules 1700V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 3.12 kW | Single Dual Emitter | 1700 V | 2.6 V | 800 A | 200 nA | |||
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GET PRICE |
100
In-stock
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Infineon Technologies | IGBT Modules 1200V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2500 W | Single Dual Emitter | 1200 V | 2.1 V | 625 A | 400 nA | |||
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GET PRICE |
100
In-stock
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Infineon Technologies | IGBT Modules 900V 300A IGBT MODULE | IGBT Silicon Modules | 62 mm | + 125 C | Single Dual Emitter | 1700 V | 600 A | ||||||
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VIEW | Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Single Dual Emitter | 1200 V | 2.1 V | 370 A | 400 nA | ||||
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GET PRICE |
25,000
In-stock
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Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2250 W | Single Dual Emitter | 1200 V | 2.6 V | 570 A | 400 nA | |||
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GET PRICE |
19,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 620A | IGBT Silicon Modules | 62 mm | + 125 C | Tray | Single Dual Emitter | 1700 V | 620 A | |||||
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GET PRICE |
61
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 400A | IGBT Silicon Modules | 62 mm | + 125 C | Single Dual Emitter | 1700 V | 400 A | ||||||
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VIEW | Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | Bulk | 2250 W | Single Dual Emitter | 1200 V | 2.1 V | 570 A | 400 nA | |||
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GET PRICE |
36
In-stock
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Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Single Dual Emitter | 1200 V | 2.1 V | 370 A | 400 nA |
