- Package / Case :
- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | RoHS | |
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13,800
In-stock
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Infineon Technologies | IGBT Modules 1600V 1800A SINGLE | - 40 C | + 125 C | Box | 11 kW | Triple Common Emitter Common Gate | 1600 V | 3.5 V | 1800 A | 600 nA | 20 V | Module | 100% Green available | ||||
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GET PRICE |
1
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.8KA | IGBT Silicon Modules | + 125 C | Triple Common Emitter Common Gate | 1700 V | 1800 A | |||||||||||
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128
In-stock
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Infineon Technologies | IGBT Modules 3300V 1200A SINGLE | IS5a ( 62 mm )-9 | + 125 C | 14.5 kW | Triple Common Emitter Common Gate | 3300 V | 3.4 V | 2000 A | 400 nA | ||||||||
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36
In-stock
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Infineon Technologies | IGBT Modules 1200V 3600A SINGLE | IHM 190X140-9 | + 125 C | Bulk | 14.8 kW | Triple Common Emitter Common Gate | 1200 V | 1.7 V | 3600 A | 400 nA | |||||||
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GET PRICE |
30
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 3.8KA | IGBT Silicon Modules | IHM190 | + 125 C | 19.2 kW | Triple Common Emitter Common Gate | 1700 V | 2.6 V | 3800 A | 400 nA |
