- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,208
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V/75A FS TRENCH IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 650 V | 2.21 V | 150 A | 400 nA | +/- 20 V | |||
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338
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.45 V | 80 A | 400 nA | 30 V | |||
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490
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/40A FS Planar IGBT Gen 2 | Through Hole | TO-247-3 | + 175 C | Tube | 349 W | Single | 600 V | 2.1 V | 80 A | 400 nA | +/- 20 V | |||
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332
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FIELD STOP TRENCH IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 250 W | Single | 650 V | 2.1 V | 60 A | 400 nA | 20 V | |||
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395
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 267 W | Single | 650 V | 2.51 V | 80 A | 400 nA | 20 V |