- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
57,400
In-stock
|
Infineon Technologies | IGBT Transistors 600V Warp2 150kHz | Through Hole | TO-220-3 | + 150 C | Tube | 215 W | Single | 600 V | 2.05 V | 40 A | 100 nA | +/- 20 V | ||
|
|
70
In-stock
|
Infineon Technologies | IGBT Transistors 600V 1.6V 120A Solar UPS Welding | Through Hole | TO-247-3 | Tube | 750 W | 600 V | 2.05 V | 240 A | 400 nA | 20 V |
