IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRG4PH40UDPBF	1+ $5.000 10+ $4.250 25+ $4.170 100+ $3.680		PDF RFQ	167 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 5-40kHz	Through Hole	TO-247-3	+ 150 C	Tube	160 W	Single	1.2 kV	2.43 V	41 A	100 nA	+/- 20 V
	IRG4PH40UD2-EP	1+ $5.470 10+ $4.650 25+ $4.560 100+ $4.030		PDF RFQ	181 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 5-40kHz	Through Hole	TO-247-3	+ 150 C	Tube	160 W	Single	1.2 kV	2.43 V	41 A	100 nA	+/- 20 V

IRG4PH40UDPBF

IRG4PH40UDPBF

Infineon Technologies

IGBT Transistors 1200V UltraFast 5-40kHz

Stock : 167

1+: $5.000

10+: $4.250

25+: $4.170

100+: $3.680

IRG4PH40UD2-EP

IRG4PH40UD2-EP

Infineon Technologies

IGBT Transistors 1200V UltraFast 5-40kHz

Stock : 181

1+: $5.470

10+: $4.650

25+: $4.560

100+: $4.030

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