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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGB20B60PD1PBF
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RFQ
57,400
In-stock
Infineon Technologies IGBT Transistors 600V Warp2 150kHz Through Hole TO-220-3 + 150 C Tube 215 W Single 600 V 2.05 V 40 A 100 nA +/- 20 V
IRGP20B120U-EP
1+
$5.840
10+
$4.960
25+
$4.870
100+
$4.300
RFQ
202
In-stock
Infineon Technologies IGBT Transistors 1200V UltraFast 5-40kHz Single IGBT Through Hole TO-247-3 + 150 C Tube 300 W Single 1.2 kV 3.05 V 40 A 100 nA +/- 20 V
IRG4BC40W-SPBF
1+
$3.130
10+
$2.660
100+
$2.310
250+
$2.190
RFQ
309
In-stock
Infineon Technologies IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT SMD/SMT D-PAK-3 + 150 C Tube 160 W Single 600 V 2.05 V 40 A 100 nA +/- 20 V
IRG4BC40W-LPBF
1+
$3.200
10+
$2.720
100+
$2.350
250+
$2.230
RFQ
115
In-stock
Infineon Technologies IGBT Transistors 600V Warp 60-150kHz Through Hole TO-262-3 + 150 C Tube 160 W Single 600 V 2.5 V 40 A   +/- 20 V
IRG4PC40UD-EPBF
1+
$4.880
10+
$4.140
25+
$4.070
100+
$3.590
RFQ
29
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-247-3 + 150 C Tube 160 W Single 600 V 1.72 V 40 A 100 nA +/- 20 V
IRGP20B120UD-EP
1+
$8.710
10+
$7.870
25+
$7.500
50+
$6.990
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RFQ
Infineon Technologies IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT Through Hole TO-247-3 + 150 C Tube 300 W Single 1.2 kV 3.05 V 40 A   +/- 20 V
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