- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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2,534
In-stock
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Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 3.7 V | 45 A | +/- 20 V | |||||
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2,089
In-stock
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Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 3.5 V | 45 A | +/- 20 V | |||||
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24,000
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 30A | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 1.9 V | 45 A | 100 nA | 20 V | ||||
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24,200
In-stock
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Infineon Technologies | IGBT Transistors IGBT TrnchStp w/Soft Fast recovery | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 1.9 V | 45 A | 100 nA | 20 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 5-40KHZ DSCRETE IGB... | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 3.7 V | 45 A | +/- 20 V | |||||
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VIEW | Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB... | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 3.5 V | 45 A | +/- 20 V |