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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PH50UDPBF
1+
$7.420
10+
$6.700
25+
$6.390
100+
$5.550
RFQ
2,534
In-stock
Infineon Technologies IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT Through Hole TO-247-3 + 150 C Tube 200 W Single 1.2 kV 3.7 V 45 A   +/- 20 V
IRG4PH50KDPBF
1+
$8.910
10+
$8.050
25+
$7.680
50+
$7.150
RFQ
2,089
In-stock
Infineon Technologies IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT Through Hole TO-247-3 + 150 C Tube 200 W Single 1.2 kV 3.5 V 45 A   +/- 20 V
K30T60
5+
$4.500
10+
$4.000
RFQ
24,000
In-stock
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 30A Through Hole TO-247-3 + 175 C Tube 187 W Single 600 V 1.9 V 45 A 100 nA 20 V
IKW30N60T
1+
$5.250
10+
$4.470
100+
$3.870
250+
$3.670
RFQ
24,200
In-stock
Infineon Technologies IGBT Transistors IGBT TrnchStp w/Soft Fast recovery Through Hole TO-247-3 + 175 C Tube 187 W Single 600 V 1.9 V 45 A 100 nA 20 V
IRG4PH50UPBF
1+
$6.220
10+
$5.290
25+
$5.190
100+
$4.580
VIEW
RFQ
Infineon Technologies IGBT Transistors 1200V ULTRAFAST 5-40KHZ DSCRETE IGB... Through Hole TO-247-3 + 150 C Tube 200 W Single 1.2 kV 3.7 V 45 A   +/- 20 V
IRG4PH50KPBF
4000+
$2.680
VIEW
RFQ
Infineon Technologies IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB... Through Hole TO-247-3 + 150 C Tube 200 W Single 1.2 kV 3.5 V 45 A   +/- 20 V
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