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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGIB6B60KDPBF
1+
$2.610
10+
$2.220
100+
$1.780
250+
$1.690
RFQ
800
In-stock
Infineon Technologies IGBT Transistors 600V Low-Vceon Through Hole TO-220FP-3 + 175 C Tube 38 W Single 600 V 1.8 V 11 A 100 nA +/- 20 V
IRG4PH20KPBF
1+
$2.820
10+
$2.400
100+
$1.920
250+
$1.820
RFQ
245
In-stock
Infineon Technologies IGBT Transistors 1200V UltraFast 4-20kHz Through Hole TO-247-3   Tube 60 W Single 1.2 kV 3.17 V 11 A   +/- 20 V
IRG4BH20K-LPBF
1+
$2.120
10+
$1.800
100+
$1.440
500+
$1.260
RFQ
450
In-stock
Infineon Technologies IGBT Transistors 1200V UltraFast 4-20kHz Through Hole TO-262-3   Tube 60 W Single 1.2 kV 3.17 V 11 A   +/- 20 V
IRG4PH20KDPBF
1+
$4.180
10+
$3.550
100+
$3.080
250+
$2.920
RFQ
112
In-stock
Infineon Technologies IGBT Transistors 1200V UltraFast 4-20kHz Through Hole TO-247-3   Tube 60 W Single 1.2 kV 3.17 V 11 A   +/- 20 V
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