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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IHW30N160R2
1+
$5.020
10+
$4.260
100+
$3.700
250+
$3.510
RFQ
494
In-stock
Infineon Technologies IGBT Transistors RC-IGBT MONO DIODE 1600V 30A Through Hole TO-247-3 + 175 C Tube 312 W Single 1600 V 2.35 V 60 A 100 nA 20 V
IHW30N160R2FKSA1
1+
$5.020
10+
$4.260
100+
$3.700
250+
$3.510
RFQ
272
In-stock
Infineon Technologies IGBT Transistors RC-IGBT MONO DIODE 1600V 30A Through Hole TO-247-3 + 175 C Tube 312 W Single 1600 V 2.35 V 60 A 100 nA 20 V
IRGP20B60PDPBF
1+
$3.640
10+
$3.090
100+
$2.680
250+
$2.540
RFQ
275
In-stock
Infineon Technologies IGBT Transistors 600V Warp2 150kHz Through Hole TO-247-3   Tube 220 W Single 600 V 2.35 V 40 A   +/- 20 V
IRGP50B60PD1PBF
1+
$6.000
10+
$5.000
25+
$5.000
100+
$4.000
RFQ
1,090
In-stock
Infineon Technologies IGBT Transistors 600V Warp2 150kHz Through Hole TO-247-3   Tube 390 W Single 600 V 2.35 V 75 A   +/- 20 V
AUIRGP50B60PD1
1+
$9.340
10+
$8.440
25+
$8.050
50+
$7.500
RFQ
42
In-stock
Infineon Technologies IGBT Transistors 600V AUTO WARP2 150KHZ COPACK IGBT Through Hole TO-247-3   Tube 390 W Single 600 V 2.35 V 75 A   +/- 20 V
IRGP30B60KD-EP
1+
$6.290
10+
$5.350
25+
$5.250
100+
$4.630
RFQ
158
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 5-40kHz Through Hole TO-247-3   Tube 304 W Single 600 V 2.35 V 60 A   +/- 20 V
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