IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRGB4061DPBF	1+ $3.080 10+ $2.620 100+ $2.270 250+ $2.150		PDF RFQ	410 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3	+ 175 C	Tube	206 W	Single	600 V	1.95 V	36 A		+/- 20 V
	IRGB4630DPBF	1+ $3.570 10+ $3.030 100+ $2.630 250+ $2.490		PDF RFQ	198 In-stock	Infineon Technologies	IGBT Transistors 600V TRENCH IGBT ULTRAFAST	Through Hole	TO-220AB-3	+ 175 C	Tube	206 W	Single	600 V	2.15 V	47 A	100 nA	+/- 20 V

IRGB4061DPBF

IRGB4061DPBF

Infineon Technologies

IGBT Transistors 600V UltraFast Trench IGBT

Stock : 410

1+: $3.080

10+: $2.620

100+: $2.270

250+: $2.150

IRGB4630DPBF

IRGB4630DPBF

Infineon Technologies

IGBT Transistors 600V TRENCH IGBT ULTRAFAST

Stock : 198

1+: $3.570

10+: $3.030

100+: $2.630

250+: $2.490

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