- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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46
In-stock
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IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 95A | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 735 W | Single | 1.7 kV | 2.5 V | 160 A | 200 nA | +/- 20 V | |||
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29
In-stock
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IXYS | IGBT Transistors | SMD/SMT | TO-268HV-2 | + 150 C | 500 W | Single | 3 kV | 2.5 V | 104 A | +/- 200 nA | +/- 25 V | ||||
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37
In-stock
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IXYS | IGBT Transistors 72 Amps 1700 V 3.3 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 2.5 V | 75 A | 100 nA | +/- 20 V | |||
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40
In-stock
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IXYS | IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode | SMD/SMT | TO-263-3 | + 175 C | Tube | Single | 900 V | 2.5 V | 20 A | 100 nA | +/- 20 V | ||||
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96
In-stock
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IXYS | IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 | SMD/SMT | TO-252-3 | + 175 C | Tube | Single | 900 V | 2.5 V | 20 A | 100 nA | +/- 20 V | ||||
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VIEW | IXYS | IGBT Transistors 75 Amps 1600V 2.5 Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | Single | 1600 V | 2.5 V | +/- 20 V | ||||||
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VIEW | IXYS | IGBT Transistors 24 Amps 1200 V 3.3 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 250 W | Single | 1.7 kV | 2.5 V | 50 A | 100 nA | +/- 20 V | |||
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VIEW | IXYS | IGBT Transistors 55 Amps 600V 2.5 Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | Single | 600 V | 2.5 V | +/- 20 V | ||||||
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VIEW | IXYS | IGBT Transistors 50 Amps 600V 2.5 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | Single | 600 V | 2.5 V | +/- 20 V |