PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT50GN60BDQ2G	1+ $7.320 10+ $6.590 25+ $6.000 100+ $5.420	PDF RFQ	182 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-247-3	+ 175 C	Tube	366 W	Single	600 V	1.5 V	107 A	600 nA	30 V
APT30GT60BRG	1+ $8.000 10+ $7.200 25+ $6.560 100+ $5.920	PDF RFQ	97 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ...	Through Hole	TO-247-3	+ 150 C	Tube	250 W	Single	600 V	2 V	64 A	100 nA	30 V
APT50GT60BRDQ2G	1+ $8.370 10+ $7.530 25+ $6.860 50+ $6.390	PDF RFQ	146 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ...	Through Hole	TO-247-3	+ 150 C	Tube	446 W	Single	600 V	2 V	110 A	120 nA	30 V
APT80GA60B	1+ $11.520 10+ $10.370 25+ $9.450 50+ $8.800	PDF RFQ	13 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C	Tube	625 W	Single	600 V	2 V	143 A	100 nA	30 V