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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB30N65IHL2WG
1+
$4.290
10+
$3.650
100+
$3.160
250+
$3.000
RFQ
210
In-stock
onsemi IGBT Transistors 650V/30A FAST IGBT FSII T Through Hole TO-247-3 + 175 C Tube 300 W Single 650 V 1.6 V 60 A 100 nA +/- 20 V
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