- Package / Case :
- Gate-Emitter Leakage Current :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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179
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 LOW | Through Hole | TO247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 1.55 V | 160 A | 200 nA | +/- 20 V | |||
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194
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 1.7 V | 160 A | 200 nA | +/- 20 V | |||
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260
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 LOW VF | Through Hole | TO-247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 2.3 V | 160 A | 200 nA | +/- 20 V | |||
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442
In-stock
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onsemi | IGBT Transistors IGBT 1200V 25A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 349 W | Single | 1.2 kV | 1.7 V | 100 A | 200 nA | +/- 20 V | |||
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145
In-stock
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onsemi | IGBT Transistors FSII 25A 1200V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 385 W | Single | 1.2 kV | 2 V | 50 A | 200 nA | +/- 20 V | |||
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172
In-stock
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onsemi | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 341 W | Single | 1.2 kV | 2.2 V | 40 A | 100 nA | +/- 20 V | |||
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7,300
In-stock
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onsemi | IGBT Transistors FSII 40A 1200V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 535 W | Single | 1.2 kV | 2 V | 80 A | 200 nA | +/- 20 V | |||
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163
In-stock
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onsemi | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 278 W | Single | 1.2 kV | 2.1 V | 30 A | 100 nA | +/- 20 V |
