- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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206
In-stock
|
onsemi | IGBT Transistors 600V/60A IGBT LPT TO-247 | Through Hole | TO-247-3 | + 150 C | Tube | 298 W | Single | 600 V | 2.6 V | 120 A | 200 nA | 20 V | |||
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105
In-stock
|
onsemi | IGBT Transistors 1350V/30A IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 394 W | Single | 1.35 kV | 2.6 V | 60 A | 100 nA | +/- 25 V | |||
|
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202
In-stock
|
onsemi | IGBT Transistors 600V/30A IGBT FSI TO-247 | Through Hole | TO-247-3 | + 150 C | Tube | 189 W | Single | 600 V | 2.6 V | 60 A | 100 nA | 20 V |
