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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB40N120L3WG
1+
$5.620
10+
$4.770
100+
$4.140
250+
$3.930
RFQ
179
In-stock
onsemi IGBT Transistors IGBT 1200V 40A FS3 LOW Through Hole TO247-3 + 175 C Tube 454 W Single 1.2 kV 1.55 V 160 A 200 nA +/- 20 V
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