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Package / Case :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB50N120FL2WG
1+
$9.330
10+
$8.430
25+
$8.040
100+
$6.980
RFQ
1,137
In-stock
onsemi IGBT Transistors 1200V/50A FAST IGBT FSII Through Hole TO-247 + 175 C Tube 535 W Single 1200 V 2.2 V 100 A 200 nA 30 V
NGTB20N135IHRWG
1+
$4.850
10+
$4.120
100+
$3.570
250+
$3.390
RFQ
333
In-stock
onsemi IGBT Transistors 1350V/20A IGBT FSII TO-24 Through Hole TO-247 + 175 C Tube 394 W Single 1350 V 2.2 V 40 A 100 nA 25 V
NGTB20N120IHWG
1+
$4.400
10+
$3.740
100+
$3.240
250+
$3.080
RFQ
172
In-stock
onsemi IGBT Transistors LC IH RC OSV Through Hole TO-247-3 + 175 C Tube 341 W Single 1.2 kV 2.2 V 40 A 100 nA +/- 20 V
NGTB35N60FL2WG
1+
$2.970
10+
$2.520
100+
$2.190
250+
$2.080
RFQ
210
In-stock
onsemi IGBT Transistors 600V/35A FAST IGBT FSII T Through Hole TO-247-3 + 175 C Tube 300 W Single 600 V 2.2 V 70 A 200 nA 20 V
NGTB35N65FL2WG
1+
$2.970
10+
$2.520
100+
$2.190
250+
$2.080
RFQ
169
In-stock
onsemi IGBT Transistors 650V/35A FAST IGBT FSII T Through Hole TO-247-3 + 175 C Tube 300 W Single 650 V 2.2 V 70 A 200 nA 20 V
NGTB30N120IHRWG
1+
$4.740
10+
$4.030
100+
$3.500
250+
$3.320
RFQ
161
In-stock
onsemi IGBT Transistors 1200V/30A RC IGBT FSII Through Hole TO-247 + 175 C Tube 384 W Single 1200 V 2.2 V 60 A 100 nA 25 V
NGTG35N65FL2WG
1+
$3.710
10+
$3.150
100+
$2.740
250+
$2.600
RFQ
30
In-stock
onsemi IGBT Transistors 650V/35A FAST IGBT FSII Through Hole TO-247-3 + 175 C Tube 300 W Single 650 V 2.2 V 70 A 200 nA +/- 20 V
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