- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,137
In-stock
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onsemi | IGBT Transistors 1200V/50A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2.2 V | 100 A | 200 nA | 30 V | ||||
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333
In-stock
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onsemi | IGBT Transistors 1350V/20A IGBT FSII TO-24 | Through Hole | TO-247 | + 175 C | Tube | 394 W | Single | 1350 V | 2.2 V | 40 A | 100 nA | 25 V | ||||
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172
In-stock
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onsemi | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 341 W | Single | 1.2 kV | 2.2 V | 40 A | 100 nA | +/- 20 V | ||||
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210
In-stock
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onsemi | IGBT Transistors 600V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2.2 V | 70 A | 200 nA | 20 V | ||||
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169
In-stock
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onsemi | IGBT Transistors 650V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | 20 V | ||||
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161
In-stock
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onsemi | IGBT Transistors 1200V/30A RC IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 384 W | Single | 1200 V | 2.2 V | 60 A | 100 nA | 25 V | ||||
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30
In-stock
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onsemi | IGBT Transistors 650V/35A FAST IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | +/- 20 V |