Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB30N60IHLWG
1+
$4.290
10+
$3.650
100+
$3.160
250+
$3.000
RFQ
210
In-stock
onsemi IGBT Transistors 600V/30A IGBT FS1 IH TO Through Hole TO-247 + 150 C Tube 250 W Single 600 V 1.8 V 60 A 100 nA 20 V
NGTG30N60FWG
1+
$3.660
10+
$3.110
100+
$2.700
250+
$2.560
RFQ
252
In-stock
onsemi IGBT Transistors 600V/30A IGBT NPT TO-247 Through Hole TO-247 + 150 C Tube 167 W Single 600 V 1.45 V 60 A 100 nA 30 V
NGTG30N60FLWG
1+
$3.870
10+
$3.290
100+
$2.850
250+
$2.710
RFQ
210
In-stock
onsemi IGBT Transistors 600V/30A IGBT LPT TO-247 Through Hole TO-247 + 150 C Tube 250 W Single 600 V 1.65 V 60 A 100 nA 30 V
NGTB30N60FWG
1+
$5.170
10+
$4.160
25+
$4.080
100+
$3.790
RFQ
204
In-stock
onsemi IGBT Transistors 600V/30A IGBT NPT TO-247 Through Hole TO-247 + 150 C Tube 167 W Single 600 V 1.45 V 60 A 100 nA 30 V
NGTB30N60SWG
1+
$4.340
10+
$3.690
100+
$3.190
250+
$3.030
RFQ
202
In-stock
onsemi IGBT Transistors 600V/30A IGBT FSI TO-247 Through Hole TO-247-3 + 150 C Tube 189 W Single 600 V 2.6 V 60 A 100 nA 20 V
Page 1 / 1