- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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74
In-stock
|
onsemi | IGBT Transistors 1200V/30A LOW VCE SAT FSII | Through Hole | TO-247 | + 175 C | Tube | 534 W | Single | 1200 V | 1.7 V | 60 A | 200 nA | 30 V | |||
|
|
252
In-stock
|
onsemi | IGBT Transistors 600V/30A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 167 W | Single | 600 V | 1.45 V | 60 A | 100 nA | 30 V | |||
|
|
140
In-stock
|
onsemi | IGBT Transistors 1200V/30A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 452 W | Single | 1200 V | 2 V | 60 A | 200 nA | 30 V | |||
|
|
210
In-stock
|
onsemi | IGBT Transistors 600V/30A IGBT LPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 600 V | 1.65 V | 60 A | 100 nA | 30 V | |||
|
|
204
In-stock
|
onsemi | IGBT Transistors 600V/30A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 167 W | Single | 600 V | 1.45 V | 60 A | 100 nA | 30 V |
